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IPD800N06NG - Power-Transistor

Features

For fast switching converters and sync. rectification.
N-channel enhancement - normal level.
175 °C operating temperature.
Avalanche rated.
Pb-free lead plating, RoHS compliant Product Summary V DS R DS(on),max ID 60 80 16 V mΩ A Type IPD800N06N G Package Marking PG-TO252-3 800N06N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current Avalanche.

Infineon

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IPD800N06NG power-transistor by Infineon - Datasheet Preview

Datasheet Details

Part number	IPD800N06NG
Manufacturer	Infineon
File Size	528.45 KB
Description	Power-Transistor
Datasheet	IPD800N06NG Datasheet

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Full PDF Text Transcription

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IPD800N06N G OptiMOS® Power-Transistor Features • For fast switching converters and sync.

Published: Jan 13, 2014 |