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IPD800N06NG Datasheet Power-transistor

Manufacturer: Infineon

Overview: IPD800N06N G OptiMOS® Power-Transistor.

Key Features

  • For fast switching converters and sync. rectification.
  • N-channel enhancement - normal level.
  • 175 °C operating temperature.
  • Avalanche rated.
  • Pb-free lead plating, RoHS compliant Product Summary V DS R DS(on),max ID 60 80 16 V mΩ A Type IPD800N06N G Package Marking PG-TO252-3 800N06N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current Avalanche.

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IPD800N06NG Distributor