Datasheet4U Logo Datasheet4U.com

IPD80N04S3-06 - Power-Transistor

Features

  • N-channel - Enhancement mode.
  • Automotive AEC Q101 qualified.
  • MSL1 up to 260°C peak reflow.
  • 175°C operating temperature.
  • Green package (RoHS compliant).
  • 100% Avalanche tested PG-TO252-3-11 Type IPD80N04S3-06 Package PG-TO252-3-11 Marking QN0406 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol ID Conditions T C=25°C, V GS=10V1) T C=100 °C, V GS=10 V2) Pulsed drain current2) Avalanche energ.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IPD80R1K0CE N-Channel MOSFET INCHANGE
IPD80R2K8CE N-Channel MOSFET INCHANGE
IPD025N06N N-Channel MOSFET INCHANGE
IPD031N03L N-Channel MOSFET INCHANGE
IPD031N06L3 N-Channel MOSFET INCHANGE

Other Datasheets by Infineon

Part Number Description
IPD80N06S3-09 Power-Transistor
IPD800N06NG Power-Transistor
IPD80P03P4L-07 Power-Transistor
IPD80R1K0CE MOSFET
IPD80R1K2P7 Power-Transistor

Full PDF Text Transcription

Click to expand full text
IPD80N04S3-06 OptiMOS®-T Power-Transistor Product Summary V DS R DS(on),max ID 40 5.2 90 V mΩ A Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • 100% Avalanche tested PG-TO252-3-11 Type IPD80N04S3-06 Package PG-TO252-3-11 Marking QN0406 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol ID Conditions T C=25°C, V GS=10V1) T C=100 °C, V GS=10 V2) Pulsed drain current2) Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS V GS P tot T j, T stg T C=25 °C T C=25 °C I D=80 A Value 90 71 320 125 ±20 100 -55 ...
Published: |