IPD80N04S3-06 Description
IPD80N04S3-06 OptiMOS®-T Power-Transistor Product Summary V DS R DS(on),max ID 40 5.2 90 V mΩ.
IPD80N04S3-06 Key Features
- N-channel
- Enhancement mode
- Automotive AEC Q101 qualified
- MSL1 up to 260°C peak reflow
- 175°C operating temperature
- Green package (RoHS pliant)
- 100% Avalanche tested PG-TO252-3-11