IPD80N06S3-09 Description
IPD80N06S3-09 OptiMOS®-T Power-Transistor Product Summary V DS R DS(on),max ID 55 8.4 80 V mΩ.
IPD80N06S3-09 Key Features
- N-channel
- Normal Level
- Enhancement mode
- Automotive AEC Q101 qualified
- MSL1 up to 260°C peak reflow
- 175°C operating temperature
- Green package (RoHS pliant)
- Ultra low Rds(on)
- 100% Avalanche tested PG-TO252-3-11
- 1 1 7.2