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IPD80N06S3-09 - Power-Transistor

Features

N-channel - Normal Level - Enhancement mode.
Automotive AEC Q101 qualified.
MSL1 up to 260°C peak reflow.
175°C operating temperature.
Green package (RoHS compliant).
Ultra low Rds(on).
100% Avalanche tested PG-TO252-3-11 Type IPD80N06S3-09 Package PG-TO252-3-11 Marking QN0609 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current1) Symbol ID Conditions T C=25 °C, V GS=10 V T C=100 °C, V GS=.

Infineon

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Datasheet Details

Part number	IPD80N06S3-09
Manufacturer	Infineon
File Size	206.39 KB
Description	Power-Transistor
Datasheet	IPD80N06S3-09 Datasheet

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Full PDF Text Transcription

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IPD80N06S3-09 OptiMOS®-T Power-Transistor Product Summary V DS R DS(on),max ID 55 8.

Published: Jan 13, 2014 |