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IPD80R1K4CE - MOSFET

General Description

CoolMOS™ CE is a revolutionary technology for high voltage power MOSFETs.

The high voltage capability combines safety with performance and ruggedness to allow stable designs at highest efficiency level.

Key Features

  • High voltage technology.
  • Extreme dv/dt rated.
  • High peak current capability.
  • Low gate charge.
  • Low effective capacitances.
  • Qualified according to JEDEC Standard.
  • Pb-free lead plating; RoHS compliant; halogen free mold compound DPAK tab 2 1 3 IPAK tab 1 23 Drain Pin 2 Gate Pin 1 Source Pin 3 Benefits.
  • Increased power density solutions due to smaller package.
  • System cost / size savings due to reduced cooling req.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS™CE 800VCoolMOS™CEPowerTransistor IPx80R1K4CE DataSheet Rev.2.3 Final PowerManagement&Multimarket 800VCoolMOS™CEPowerTransistor IPD80R1K4CE,IPU80R1K4CE 1Description CoolMOS™CEisarevolutionarytechnologyforhighvoltagepower MOSFETs.Thehighvoltagecapabilitycombinessafetywithperformance andruggednesstoallowstabledesignsathighestefficiencylevel. CoolMOS™800VCEcomeswithaselectedpackagechoiceofferingthe benefitofreducedsystemcostsandhigherpowerdensitydesigns.