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IPD85P04P4-07 - Power-Transistor

Features

  • P-channel - Normal Level - Enhancement mode.
  • AEC qualified.
  • MSL1 up to 260°C peak reflow.
  • 175°C operating temperature.
  • Green package (RoHS compliant).
  • 100% Avalanche tested PG-TO252-3-313 Type IPD85P04P4-07 Package PG-TO252-3-313 Marking 4P0407 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions T C=25°C, V GS=-10V T C=100°C, V GS=-10V2) Pulsed drain current1) Avalanche energy, single pulse1) Avalanche c.

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IPD85P04P4-07 OptiMOS®-P2 Power-Transistor Product Summary V DS R DS(on) ID -40 7.3 -85 V mW A Features • P-channel - Normal Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • 100% Avalanche tested PG-TO252-3-313 Type IPD85P04P4-07 Package PG-TO252-3-313 Marking 4P0407 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions T C=25°C, V GS=-10V T C=100°C, V GS=-10V2) Pulsed drain current1) Avalanche energy, single pulse1) Avalanche current, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS I AS V GS P tot T j, T stg T C=25°C I D=-42.
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