Infineon Technologies IPD90N03S4L-03
Power-Transistor
| Part No. | IPD90N03S4L-03 |
|---|---|
| Datasheet | IPD90N03S4L-03 Download |
| Manufacturer |  Infineon Technologies |
| Description | Power-Transistor |
| Buy | Stock & Price |
FEATURES
● N-channel - Enhancement mode● Automotive AEC Q101 qualified
● MSL1 up to 260°C peak reflow
● 175°C operating temperature
● Green product (RoHS compliant)
● 100% Avalanche tested IPD90N03S4L-03 Product Summary V DS R DS(on),max ID 30 V 3.3 mΩ 90 A PG-TO252-3-11 Type IPD90N03S4L-03 Package Marking PG-TO252-3-11 4N03L03 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) I D T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Pulsed drain current2) I D,pulse T C=25 °C Avalanche energy, single pulse E AS I D=90 A Avalanche current, single pulse I AS T C=25 °C Gate source voltage V GS - Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg - IEC climatic category; DIN IEC 68-1 - - Value 90 90 360 85 90 ±16 94 -55 ... +175 55/175/56 Unit A mJ A V W °C Rev. 2.1 page 1 2010-03-08 IPD90N03S4L-03 Parameter Symbol Conditions Thermal characteristics2) Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area3) min.
