IPF067N20NM6
Features
- N-channel,normallevel
- Verylowon-resistance RDS(on)
- Excellentgatechargex RDS(on)product(FOM)
- Verylowreverserecoverycharge(Qrr)
- Highavalancheenergyrating
- 175°Coperatingtemperature
- Pb-freeleadplating;Ro HSpliant
- Halogen-freeaccordingto IEC61249-2-21
- MSL1classifiedaccordingto J-STD-020
- 100%avalanchetested
Productvalidation
Fullyqualifiedaccordingto JEDECfor Industrial Applications
Table1Key Performance Parameters
Parameter
Value
Unit
RDS(on),max
6.7 mΩ
Qoss
227 n C
72 n C
Qrr(1000A/µs)
364 n C
Type/Ordering Code IPF067N20NM6
Package PG-TO263-7
D²-PAK7pin tab 1
Drain Pin 4, tab
Gate Pin 1
Source Pin 2,3,5,6,7
Marking 067N20N6
Related Links
- Final Data Sheet
Rev.2.0,2023-12-07
Opti MOSTM6Power-Transistor,200V...
