• Part: IPG20N04S4L-11
  • Description: Power Transistor
  • Manufacturer: Infineon
  • Size: 297.43 KB
Download IPG20N04S4L-11 Datasheet PDF
IPG20N04S4L-11 page 2
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Datasheet Summary

OptiMOS™-T2 Power-Transistor Features - Dual N-channel Logic Level - Enhancement mode - AEC Q101 qualified - MSL1 up to 260°C peak reflow - 175°C operating temperature - Green Product (RoHS pliant) - 100% Avalanche tested Product Summary VDS RDS(on),max4) ID 40 V 11.6 mW 20 A PG-TDSON-8 87 65 12 34 Type Package Marking PG-TDSON-8 4N04L11 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current one channel active T C=25 °C, V GS=10 V1) Pulsed drain current2) one channel active Avalanche energy, single pulse2, 4) Avalanche current, single pulse4) Gate source voltage Power...