IPG20N06S4L-11
IPG20N06S4L-11 is Power Transistor manufactured by Infineon.
OptiMOS™-T2 Power-Transistor
Product Summary V DS R DS(on),max4) ID 60 11.2 20 V mW A
Features
- Dual N-channel Logic Level
- Enhancement mode PG-TDSON-8-4
- AEC Q101 qualified
- MSL1 up to 260°C peak reflow
- 175°C operating temperature
- Green Product (RoHS pliant)
- 100% Avalanche tested
Type IPG20N06S4L-11
Package PG-TDSON-8-4
Marking 4N06L11
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current one channel active Symbol Conditions T C=25 °C, V GS=10 V1) T C=100 °C, V GS=10 V2) Pulsed drain current2) one channel active Avalanche energy, single pulse2, 4) Avalanche current, single pulse4) Gate source voltage Power...
