IPG20N06S4L-26
IPG20N06S4L-26 is Power Transistor manufactured by Infineon.
OptiMOS™-T2 Power-Transistor
Features
- Dual N-channel Logic Level
- Enhancement mode
- AEC Q101 qualified
- MSL1 up to 260°C peak reflow
- 175°C operating temperature
- Green Product (RoHS pliant)
- 100% Avalanche tested
Product Summary VDS RDS(on),max4) ID
60 V 26 mW 20 A
PG-TDSON-8
87 65
12 34
Type
Package
Marking
PG-TDSON-8
4N06L26
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current one channel active
T C=25 °C, V GS=10 V1)
Pulsed drain current2) one channel active
Avalanche energy, single pulse2, 4) Avalanche current, single pulse4) Gate source voltage
Power...
