The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
OptiMOS™-T2 Power-Transistor
Features • Dual N-channel Logic Level - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested
IPG20N06S4L-26
Product Summary VDS RDS(on),max4) ID
60 V 26 mW 20 A
PG-TDSON-8
87 65
12 34
87
65
Type
Package
Marking
IPG20N06S4L-26
PG-TDSON-8
4N06L26
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current one channel active
ID
T C=25 °C, V GS=10 V1)
Pulsed drain current2) one channel active
Avalanche energy, single pulse2, 4) Avalanche current, single pulse4) Gate source voltage
Power dissipation one channel active
T C=100 °C, V GS=10 V2)
I D,pulse -
E AS I AS V GS
I D=10A -
P tot
T C=
IPG20N06S4L-26 Datasheet
