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IPG20N10S4L-35 - Power-Transistor

Key Features

  • Dual N-channel Logic Level - Enhancement mode.
  • AEC Q101 qualified.
  • MSL1 up to 260°C peak reflow.
  • 175°C operating temperature.
  • Green Product (RoHS compliant).
  • 100% Avalanche tested IPG20N10S4L-35 Product Summary V DS R 4) DS(on),max ID 100 V 35 mW 20 A PG-TDSON-8-4 Type IPG20N10S4L-35 Package Marking PG-TDSON-8-4 4N10L35 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain cur.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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OptiMOS™-T2 Power-Transistor Features • Dual N-channel Logic Level - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested IPG20N10S4L-35 Product Summary V DS R 4) DS(on),max ID 100 V 35 mW 20 A PG-TDSON-8-4 Type IPG20N10S4L-35 Package Marking PG-TDSON-8-4 4N10L35 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current one channel active I D T C=25 °C, V GS=10 V1) Pulsed drain current2) one channel active Avalanche energy, single pulse2, 4) Avalanche current, single pulse4) Gate source voltage Power dissipation one channel active T C=100 °C, V GS=10 V2) I D,pulse - E AS I AS V GS I D=10A - P tot T C=25 °C Opera