IPI05CNE8NG Datasheet Power-transistor

Manufacturer: Infineon

Overview: IPB051NE8N G IPI05CNE8N G IPP054NE8N G OptiMOS™2 Power-Transistor.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number	IPI05CNE8NG
Manufacturer	Infineon
File Size	493.93 KB
Description	Power-Transistor
Datasheet	IPI05CNE8NG IPI05CNE8N Datasheet (PDF)

N-channel, normal level.
Excellent gate charge x R DS(on) product (FOM).
Very low on-resistance R DS(on) Product Summary V DS R DS(on),max (TO 263) ID 85 V 5.1 mΩ 100 A.
175 °C operating temperature.
Pb-free lead plating; RoHS compliant.
Qualified according to JEDEC1) for target.