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IPI05CNE8NG - Power-Transistor

Download the IPI05CNE8NG datasheet PDF. This datasheet also covers the IPI05CNE8N variant, as both devices belong to the same power-transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • N-channel, normal level.
  • Excellent gate charge x R DS(on) product (FOM).
  • Very low on-resistance R DS(on) Product Summary V DS R DS(on),max (TO 263) ID 85 V 5.1 mΩ 100 A.
  • 175 °C operating temperature.
  • Pb-free lead plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IPI05CNE8N-Infineon.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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IPI051NE8NG Power-Transistor Infineon Technologies
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Other Datasheets by Infineon

Part Number Description
IPI05CNE8N Power-Transistor
IPI05CN10N Power-Transistor
IPI05CN10NG Power-Transistor
IPI051N15N5 MOSFET
IPI052NE7N3 Power-Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IPB051NE8N G IPI05CNE8N G IPP054NE8N G OptiMOS™2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary V DS R DS(on),max (TO 263) ID 85 V 5.