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IPI072N10N3G Datasheet

Power Transistor

Manufacturer: Infineon

This datasheet includes multiple variants, all published together in a single manufacturer document.

IPI072N10N3G Overview

IPP072N10N3 G IPI072N10N3 G OptiMOS®3 Power-Transistor.

IPI072N10N3G Key Features

  • N-channel, normal level
  • Excellent gate charge x R DS(on) product (FOM)
  • Very low on-resistance R DS(on)
  • 175 °C operating temperature
  • Pb-free lead plating; RoHS pliant
  • Qualified according to JEDEC1) for target application
  • Ideal for high-frequency switching and synchronous rectification
  • 55 ... 175
  • case Thermal resistance, junction
  • ambient

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