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IPI072N10N3G - Power Transistor

Download the IPI072N10N3G datasheet PDF. This datasheet also covers the IPI072N10N3 variant, as both devices belong to the same power transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • N-channel, normal level.
  • Excellent gate charge x R DS(on) product (FOM).
  • Very low on-resistance R DS(on) Product Summary V DS R DS(on),max ID.
  • 175 °C operating temperature.
  • Pb-free lead plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IPI072N10N3-Infineon.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by Infineon

Part Number Description
IPI072N10N3 Power Transistor
IPI070N08N3 Power-Transistor
IPI070N08N3G Power-Transistor
IPI075N15N3 Power-Transistor
IPI076N12N3 Power-Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IPP072N10N3 G IPI072N10N3 G OptiMOS®3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary V DS R DS(on),max ID • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification Type IPI072N10N3 G IPP072N10N3 G 100 V 7.