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IPI120N08S4-03 - Power-Transistor

Datasheet Summary

Features

  • N-channel - Enhancement mode.
  • AEC Q101 qualified.
  • MSL1 up to 260°C peak reflow.
  • 175°C operating temperature.
  • Green Product (RoHS compliant).
  • 100% Avalanche tested IPB120N08S4-03 IPI120N08S4-03, IPP120N08S4-03 Product Summary V DS R DS(on),max (SMD version) ID 80 V 2.5 mW 120 A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB120N08S4-03 IPI120N08S4-03 IPP120N08S4-03 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 4N0803 4N0803 4N.

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Datasheet Details

Part number IPI120N08S4-03
Manufacturer Infineon
File Size 224.84 KB
Description Power-Transistor
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OptiMOS™-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested IPB120N08S4-03 IPI120N08S4-03, IPP120N08S4-03 Product Summary V DS R DS(on),max (SMD version) ID 80 V 2.
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