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IPI120N08S4-04 - Power-Transistor

Datasheet Summary

Features

  • N-channel - Enhancement mode.
  • AEC Q101 qualified.
  • MSL1 up to 260°C peak reflow.
  • 175°C operating temperature.
  • RoHS compliant.
  • 100% Avalanche tested IPB120N08S4-04 IPI120N08S4-04, IPP120N08S4-04 Product Summary VDS RDS(on),max (SMD version) ID 80 V 4.1 mW 120 A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB120N08S4-04 IPI120N08S4-04 IPP120N08S4-04 Package Marking PG-TO263-3-2 4N0804 PG-TO262-3-1 4N0804 PG-TO220-3-1 4N0804 Maximum r.

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Datasheet Details

Part number IPI120N08S4-04
Manufacturer Infineon
File Size 785.79 KB
Description Power-Transistor
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OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • RoHS compliant • 100% Avalanche tested IPB120N08S4-04 IPI120N08S4-04, IPP120N08S4-04 Product Summary VDS RDS(on),max (SMD version) ID 80 V 4.
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