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IPI120N10S4-05 - Power-Transistor

Features

  • ID.
  • N-channel - Normal Level - Enhancement mode.
  • AEC Q101 qualified PG-TO263-3-2 PG-TO262-3-1 100 V 5.0 mW 120 A PG-TO220-3-1.
  • MSL1 up to 260°C peak reflow.
  • 175°C operating temperature.
  • Green Product (RoHS compliant).
  • 100% Avalanche tested Type IPB120N10S4-05 IPI120N10S4-05 IPP120N10S4-05 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 4N1005 4N1005 4N1005 Maximum ratings, at T j=25 °C, unless otherwise specified Paramet.

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Datasheet Details

Part number IPI120N10S4-05
Manufacturer Infineon
File Size 385.87 KB
Description Power-Transistor
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IPB120N10S4-05 IPI120N10S4-05, IPP120N10S4-05 OptiMOS®-T2 Power-Transistor Product Summary VDS RDS(on),max (SMD version) Features ID • N-channel - Normal Level - Enhancement mode • AEC Q101 qualified PG-TO263-3-2 PG-TO262-3-1 100 V 5.
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