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IPI126N10N3 Datasheet Power-transistor

Manufacturer: Infineon

Overview: IPP126N10N3 G IPB123N10N3 G IPI126N10N3 G OptiMOSTM3 Power-Transistor.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • N-channel, normal level.
  • Excellent gate charge x R DS(on) product (FOM).
  • Very low on-resistance R DS(on) Product Summary V DS R DS(on),max TO-263 ID 100 V 12.3 mΩ 58 A.
  • 175 °C operating temperature.
  • Pb-free lead plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

IPI126N10N3G from other manufacturers

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Brand Logo Part Number Description Other Manufacturers
Infineon Technologies Logo IPI126N10N3G Power-Transistor Infineon Technologies

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