IPI50N10S3L-16 Datasheet | Infineon

Features - N-channel - Enhancement mode - Automotive AEC Q101 qualified - MSL1 up to 260°C peak reflow - 175°C operating temperature - Green product (Ro HS pliant) - 100% Avalanche tested PG-TO263-3-2 PG-TO220-3-1 Type IPB50N10S3L-16 IPI50N10S3L-16 IPP50N10S3L-16 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 3N10L16 3N10L16 3N10L16 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol ID Conditions T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V1) Pulsed drain current1) Avalanche energy, single pulse1) Avalanche current, single pulse Gate source voltage2) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS I AS V GS P tot T j, T stg T C=25 °C T C=25 °C I D=25A Value 50 37 200 330 50 ±20 100 -55 ... +175 55/175/56 m J A V W °C Unit A Rev. 1.1 page 1 2008-04-09 Free Datasheet http://../ IPB50N10S3L-16 IPI50N10S3L-16, IPP50N10S3L-16 Parameter Symbol Conditions min. Thermal characteristics1) Thermal resistance, junction - case Thermal resistance, junction ambient, leaded SMD version, device on PCB R th JC R th JA R th JA minimal footprint 6 cm2 cooling area3) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D= 1 m A V GS(th) I DSS V DS=V GS, I D=60µA V DS=80 V, V GS=0 V, T j=25 °C V DS=80 V, V GS=0 V, T j=125 °C2) Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=16V, V DS=0V V GS=4.5V, I D=50A V GS=4.5V, I D=50A, SMD version V GS=10 V, I D=50 A V GS=10 V, I D=50 A, SMD version 100 1.2 1.7 0.01 2.4 1 µA V 1.5 62 62 40 K/W Values typ. max. Unit - 1 16.1 15.8 13.1 12.8 100 100 20.9 20.6 15.7 15.4 n A mΩ Rev. 1.1 page 2 2008-04-09 Free Datasheet http://../ IPB50N10S3L-16 IPI50N10S3L-16, IPP50N10S3L-16 Parameter Symbol Conditions min. Dynamic characteristics1) Input capacitance Output...