• Part: IPI80N06S4-07
  • Description: Power-Transistor
  • Manufacturer: Infineon
  • Size: 167.49 KB
Download IPI80N06S4-07 Datasheet PDF
Infineon
IPI80N06S4-07
IPI80N06S4-07 is manufactured by Infineon.
OptiMOS®-T2 Power-Transistor Features - N-channel - Enhancement mode - AEC Q101 qualified - MSL1 up to 260°C peak reflow - 175°C operating temperature - Green Product (RoHS pliant) - 100% Avalanche tested IPB80N06S4-07 IPI80N06S4-07, IPP80N06S4-07 Product Summary V DS R DS(on),max (SMD version) ID 60 V 7.1 mΩ 80 A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB80N06S4-07 IPI80N06S4-07 IPP80N06S4-07 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 4N0607 4N0607 4N0607 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25°C, V GS=10V1) T C=100°C, V GS=10V2) Pulsed drain current2) I D,pulse T...