IPL60R125C7 - MOSFET

Datasheet Summary

Description

Features

Suitable for hard and soft switching (PFC and high performance LLC).
Increased MOSFET dv/dt ruggedness to 120V/ns.
Increased efficiency due to best in class FOM RDS(on).
Eoss and RDS(on).
Qg.
Best in class RDS(on) /package.
SMD package with very low parasitic inductance for easy device control.
Qualified for industrial grade.

Infineon

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Datasheet Details

Part number	IPL60R125C7
Manufacturer	Infineon
File Size	1.38 MB
Description	MOSFET
Datasheet	IPL60R125C7 Datasheet
Additional preview pages of the IPL60R125C7 datasheet.

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Full PDF Text Transcription

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IPL60R125C7 MOSFET 600VCoolMOSªC7PowerTransistor CoolMOS™C7isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies. 600VCoolMOS™C7seriescombinestheexperienceoftheleadingSJ MOSFETsupplierwithhighclassinnovation. The600VC7isthefirsttechnologyeverwithRDS(on)*Abelow1Ohm*mm².

Published: Dec 16, 2016 |