IPL60R180P6
Description
Sheet 3 Rev.2.0,2014-05-16 600VCoolMOS™P6PowerTransistor IPL60R180P6 2Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Pulsed drain current2) Avalanche energy, single pulse Avalanche energy, repetitive Avalanche current, repetitive MOSFET dv/dt ruggedness Gate source voltage (static) Gate source voltage (dynamic) Power dissipation Storage temperature Operating junction temperature Continuous diode forward current Diode pulse current2) Reverse diode dv/dt3) ID ID,pulse EAS EAR IAR dv/dt VGS VGS Ptot Tstg Tj IS IS,pulse dv/dt Maximum diode mutation speed dif/dt Min.
Key Features
- IncreasedMOSFETdv/dtruggedness
- ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
- Veryhighmutationruggedness
- Easytouse/drive
- Pb-freeplating,Halogenfreemoldpound
- QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20 andJESD22)
