IPL60R185C7
Description
1 Final Data Sheet 2 Rev.2.1,2017-08-30 600VCoolMOSªC7PowerTransistor IPL60R185C7 1Maximumratings at.
Key Features
- Suitableforhardandsoftswitching(PFCandhighperformanceLLC)
- IncreasedMOSFETdv/dtruggednessto120V/ns
- IncreasedefficiencyduetobestinclassFOMRDS(on)*EossandRDS(on)*Qg
- BestinclassRDS(on)/package
- SMDpackagewithverylowparasiticinductanceforeasydevicecontrol
- QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20 andJESD22)
- 4pinkelvinsourceconcept Benefits
- IncreasedeconomiesofscalebyuseinPFCandPWMtopologiesinthe application
- Higherdv/dtlimitenablesfasterswitchingleadingtohigherefficiency
- Enablinghighersystemefficiencybylowerswitchinglosses
