IPL65R099C7
Description
Sheet 2 Rev.2.1,2017-08-29 650VCoolMOSªC7PowerTransistor IPL65R099C7 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Pulsed dra.
Key Features
- IncreasedMOSFETdv/dtruggedness
- BetterefficiencyduetobestinclassFOMRDS(on)*EossandRDS(on)*Qg
- ThinPAKSMDPackagewithverylowparasiticinductancetoenablefast andreliableswitchingwithminimumofsizetoincreasepower-density
- Easytouse/driveduetodriversourcepinforbettercontrolofthegate
- Pb-freeplating,halogenfreemoldpound
- QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20 andJESD22) Benefits
- Enablinghighersystemefficiencybylowerswitchinglosses
- Enablinghigherfrequency/increasedpowerdensitysolutions
- Systemcost/sizesavingsduetoreducedcoolingrequirements
