IPL65R1K0C6S
Description
Sheet 3 Rev.2.0,2014-07-08 650VCoolMOS™C6PowerTransistor IPL65R1K0C6S 2Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) ID Pulsed drain current2) Avalanche energy, single pulse Avalanche energy, repetitive Avalanche current, repetitive MOSFET dv/dt ruggedness ID,pulse EAS EAR IAR dv/dt Gate source voltage VGS Power dissipation (non FullPAK) Operating and storage temperature Continuous diode forward current Diode pulse current2) Reverse diode dv/dt3) Maximum diode mutation speed3) Ptot Tj,Tstg IS IS,pulse dv/dt dif/dt Min.
Key Features
- ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
- Veryhighmutationruggedness
- Easytouse/drive
- Pb-freeplating,Halogenfreemoldpound
- QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20 andJESD22)
