IPLK60R1K0PFD7
Features
- Extremelylowlossesduetoverylow FOMRDS(on)- Qgand RDS(on)- Eoss
- Lowswitchinglosses Eoss,excellentthermalbehavior
- Fastbodydiode
- Widerangeportfolioof RDS(on)andpackagevariations
- Integratedzenerdiode
Benefits
- Enableshighpowerdensitydesignsandsmallformfactors
- Enablesefficiencygainsathigherswitchingfrequencies
- Excellentmutationruggedness
- Easytoselectrightpartsandoptimizethedesign
- High ESDruggedness
Potentialapplications
Remendedfor ZVStopologiesusedinhighdensitychargers, adapters,lightingandmotordrivesapplications,etc.
Productvalidation
Fullyqualifiedaccordingto JEDECfor Industrial Applications
Pleasenote:For MOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyremended.
Thin PAK5x6
8 7 6 5
1 2 3
- 1: Internal body diode Drain
- 2: Internal ESD diode Pin 5,6,7,8
Gate Pin 4
- 1
- 2
Kelvin Source Pin 3
Source Pin 1,2
Table1Key Performance...
