IPLK70R1K4P7
Features
- Extremelylowlossesduetoverylow FOMRDS(on)- Qgand RDS(on)- Eoss
- Excellentthermalbehavior
- Integrated ESDprotectiondiode
- Lowswitchinglosses(Eoss)
- Fullyqualifiedacc.JEDECfor Industrial Applications
Benefits
- Costpetitivetechnology
- Lowertemperature
- High ESDruggedness
- Enablesefficiencygainsathigherswitchingfrequencies
- Enableshighpowerdensitydesignsandsmallformfactors
Potentialapplications
Remendedfor Flybacktopologiesin Chargersand Adapters
Pleasenote:For MOSFETparallelingtheuseofferritebeadsonthegate orseperatetotempolesisgenerallyremended.
Thin PAK5x6
8 7 6 5
1 2 3
- 1: Internal body diode Drain
- 2: Internal ESD diode Pin 5,6,7,8
Gate Pin 4
- 1
- 2
Kelvin Source Pin 3
Source Pin 1,2
Table1Key Performance Parameters
Parameter
Value
Unit
VDS @ Tj=25°C
RDS(on),max
Ω
Qg,typ
4.7 n C
ID,pulse
Eoss @...
