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IPN50R1K4CE - MOSFET

Datasheet Summary

Features

  • Extremely low losses due to very low FOM Rdson.
  • Qg and Eoss.
  • Very high commutation ruggedness.
  • Easy to use/drive.
  • Pb-free plating, Halogen free mold compound.
  • Qualified for standard grade.

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Datasheet preview – IPN50R1K4CE

Datasheet Details

Part number IPN50R1K4CE
Manufacturer Infineon
File Size 1.00 MB
Description MOSFET
Datasheet download datasheet IPN50R1K4CE Datasheet
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Full PDF Text Transcription

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IPN50R1K4CE MOSFET 500VCoolMOSªCEPowerTransistor CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™CEisa price-performanceoptimizedplatformenablingtotargetcostsensitive applicationsinConsumerandLightingmarketsbystillmeetinghighest efficiencystandards.Thenewseriesprovidesallbenefitsofafast switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand offeringthebestcostdownperformanceratioavailableonthemarket.
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