IPN70R1K4P7S
Overview
- ExtremelylowlossesduetoverylowFOMRDS(on)*QgandRDS(on)*Eoss
- Excellentthermalbehavior
- IntegratedESDprotectiondiode
- Lowswitchinglosses(Eoss)
- Productvalidationacc.JEDECStandard Benefits
- Costcompetitivetechnology
- Lowertemperature
- HighESDruggedness
- Enablesefficiencygainsathigherswitchingfrequencies
- Enableshighpowerdensitydesignsandsmallformfactors Potentialapplications RecommendedforFlybacktopologiesforexampleusedinChargers, Adapters,LightingApplications,etc. Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseperatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj=25°C RDS(on),max 700 1.4 V Ω Qg,typ
