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IPP026N10NF2S - MOSFET

Description

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Features

  • Optimized for a wide range of.

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Full PDF Text Transcription

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IPP026N10NF2S MOSFET StrongIRFETTM2Power-Transistor Features •Optimizedforawiderangeofapplications •N-Channel,normallevel •100%avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Productvalidation QualifiedaccordingtoJEDECStandard Table1KeyPerformanceParameters Parameter Value Unit VDS 100 V RDS(on),max 2.6 mΩ ID 184 A Qoss 131 nC QG 103 nC PG-TO220-3 tab Drain Pin 2, Tab Gate Pin 1 Source Pin 3 Type/OrderingCode IPP026N10NF2S Package PG-TO220-3 Marking 026N10NS RelatedLinks - Final Data Sheet 1 Rev.2.1,2022-06-15 StrongIRFETTM2Power-Transistor IPP026N10NF2S TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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