Description
Sheet 3 Rev.2.0,2014-12-17 OptiMOSª5Power-Transistor,80V IPP027N08N5 2Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current Pulsed drain current1) Avalanche energy, single pulse2) Gate source voltage Power dissipation Operating and storage temperature ID ID,pulse EAS VGS Ptot Tj,Tstg Min. 120 - 120 - 480 - 374 - 20 - 214 - 175 Unit Note/TestCondition A TC=25°C TC=100°C A TC=25°C mJ ID=100A,RGS=25Ω V- W TC=25°C °C IEC climatic category; DIN IEC 68-1: 55/175/56 3Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol - case RthJC - ambient, minimal footprint RthJA - ambient, 6 cm2 cooling area3) RthJA Soldering temperature, wave and reflow soldering are allowed Tsold Min.
Key Features
- Idealforhighfrequencyswitchingandsync.rec
- ExcellentgatechargexRDS(on)product(FOM)
- Verylowon-resistanceRDS(on)
- N-channel,normallevel
- 100%avalanchetested
- Pb-freeplating;RoHScompliant
- QualifiedaccordingtoJEDEC1)fortargetapplications
