Datasheet Summary
MOSFET
MetalOxideSemiconductorFieldEffectTransistor
OptiMOSTM
OptiMOSTMPower-Transistor,60V IPP029N06N
DataSheet
Rev.2.6 Final
PowerManagement&Multimarket
1Description
Features
- OptimizedforhighperformanceSMPS,e.g.sync.rec.
- 100%avalanchetested
- Superiorthermalresistance
- N-channel
- QualifiedaccordingtoJEDEC1)fortargetapplications
- Pb-freeleadplating;RoHSpliant
- Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS 60
RDS(on),max
2.9 mΩ
ID 100 A
QOSS
65 nC
QG(0V..10V)
56 nC
OptiMOSTMPower-Transistor,60V IPP029N06N
TO-220-3...
