IPP029N15NM6 Datasheet | Infineon

Public IPP029N15NM6 Final datasheet MOSFET OptiMOS™ 6 Power‑Transistor, 150 V Features - N‑channel, normal level - Very low on‑resistance RDS(on) - Superior thermal resistance - 100% avalanche tested - Pb‑free lead plating; RoHS pliant - Halogen‑free according to IEC61249‑2‑21 Product validation Fully qualified according to JEDEC for Industrial Applications Table 1 Key Performance Parameters Parameter Value Unit RDS(on),max 2.9 mΩ Qoss 310 nC 105 nC Qrr (500A/μs) 220 nC Type/Ordering Code IPP029N15NM6 Package PG‑TO220‑3 PG‑TO220‑3 tab 1 23 Drain Pin 2, Tab Gate Pin...