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IPP029N15NM6 - MOSFET

General Description

1 Maximum ratings 3 T

Key Features

  • N‑channel, normal level.
  • Very low on‑resistance RDS(on).
  • Superior thermal resistance.
  • 100% avalanche tested.
  • Pb‑free lead plating; RoHS compliant.
  • Halogen‑free according to IEC61249‑2‑21 Product validation Fully qualified according to JEDEC for Industrial.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Public IPP029N15NM6 Final datasheet MOSFET OptiMOS™ 6 Power‑Transistor, 150 V Features • N‑channel, normal level • Very low on‑resistance RDS(on) • Superior thermal resistance • 100% avalanche tested • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21 Product validation Fully qualified according to JEDEC for Industrial Applications Table 1 Key Performance Parameters Parameter Value Unit VDS 150 V RDS(on),max 2.9 mΩ ID 197 A Qoss 310 nC QG 105 nC Qrr (500A/μs) 220 nC Type/Ordering Code IPP029N15NM6 Package PG‑TO220‑3 PG‑TO220‑3 tab 1 23 Drain Pin 2, Tab Gate Pin 1 Source Pin 3 Marking 029N15N6 Related Links ‑ Datasheet https://www.infineon.com 1 Revision 2.