Infineon Technologies IPP040N06N
Power-Transistor
| Part No. | IPP040N06N |
|---|---|
| Datasheet | IPP040N06N Download |
| Manufacturer |  Infineon Technologies |
| Description | Power-Transistor |
| Buy | Stock & Price |
FEATURES
● Optimized for high performance SMPS, e.g. sync. rec.● 100% avalanche tested
● Superior thermal resistance
● N-channel
● Qualified according to JEDEC1) for target applications
● Pb-free lead plating; RoHS compliant
● Halogen-free according to IEC61249-2-21 IPP040N06N Product Summary VDS RDS(on),max ID QOSS QG(0V..10V) 60 V 4.0 mW 80 A 44 nC 38 nC PG-TO220-3 Type IPP040N06N Package PG-TO220-3 Marking 040N06N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value Unit Continuous drain current I D V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C 80 A 80 V GS=10 V, T C=25 °C, R thJA =50K/W 20 Pulsed drain current2) I D,pulse T C=25 °C 320 Avalanche energy, single pulse3) E AS I D=80 A, R GS=25 W 70 mJ Gate source voltage V GS ±20 V 1) J-STD20 and JESD22 2) See figure 3 for more detailed information 3) See figure 13 for more detailed information 4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection.
