IPP050N06N
IPP050N06N is Power-Transistor manufactured by Infineon.
- Part of the IPP050N06NG comparator family.
- Part of the IPP050N06NG comparator family.
Features
- For fast switching converters and sync. rectification
- N-channel enhancement
- normal level
- 175 °C operating temperature
- Avalanche rated
- Pb-free lead plating, Ro HS pliant
IPP050N06N G IPB050N06N G
Product Summary V DS R DS(on),max SMDversion ID
60 V 4.7 m: 100 A
Type
IPB050N06N
Package Marking
PG-TO220-3 050N06N
PG-TO263-3 050N06N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current Pulsed drain current
ID I D,pulse
T C=25 °C1) T C=100 °C T C=25 °C2)
Avalanche energy, single pulse
E AS
I D=100 A, R GS=25 :
Reverse diode dv /dt dv /dt
I D=100 A, V DS=48 V, di /dt =200 A/μs, T j,max=175 °C
Gate source voltage
V GS
Power dissipation
P tot
T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1) Current is limited by bondwire; with an Rth JC=0.5 the chip is able to carry 160A 2) See figure 3
Rev. 1.14 page 1
Value 100 100 400 810
±20 300 -55 ... 175 55/175/56
Unit A m J k V/μs V W...
