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IPP05CN10NG - Power-Transistor

This page provides the datasheet information for the IPP05CN10NG, a member of the IPP05CN10N Power-Transistor family.

Features

  • N-channel, normal level.
  • Excellent gate charge x R DS(on) product (FOM).
  • Very low on-resistance R DS(on) Product Summary V DS R DS(on),max (TO 263) ID 100 V 5.1 mΩ 100 A.
  • 175 °C operating temperature.
  • Pb-free lead plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

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Datasheet Details

Part number IPP05CN10NG
Manufacturer Infineon
File Size 510.71 KB
Description Power-Transistor
Datasheet download datasheet IPP05CN10NG Datasheet
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Full PDF Text Transcription

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IPB05CN10N G IPI05CN10N G IPP05CN10N G OptiMOS®2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary V DS R DS(on),max (TO 263) ID 100 V 5.
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