Datasheet4U Logo Datasheet4U.com

IPP069N20NM6 - MOSFET

General Description

1 Maximum ratings 3 T

Key Features

  • N‑channel, normal level.
  • Very low on‑resistance RDS(on).
  • Excellent gate charge x RDS(on) product (FOM).
  • Very low reverse recovery charge (Qrr).
  • High avalanche energy rating.
  • 175°C operating temperature.
  • Pb‑free lead plating; RoHS compliant.
  • Halogen‑free according to IEC61249‑2‑21.
  • 100% avalanche tested Product validation Fully qualified according to JEDEC for Industrial.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IPP060N06N Power-Transistor Infineon Technologies
IPP060N06N N-Channel MOSFET INCHANGE
IPP062NE7N3 N-Channel MOSFET INCHANGE
IPP065N03L N-Channel MOSFET INCHANGE
IPP065N03LG Power-Transistor Infineon Technologies

Other Datasheets by Infineon

Part Number Description
IPP062NE7N3 Power-Transistor
IPP062NE7N3G Power-Transistor
IPP065N03L Power-Transistor
IPP011N03LF2S MOSFET
IPP011N04NF2S 40V MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Public IPP069N20NM6 Final datasheet MOSFET OptiMOS™ 6 Power‑Transistor, 200 V Features • N‑channel, normal level • Very low on‑resistance RDS(on) • Excellent gate charge x RDS(on) product (FOM) • Very low reverse recovery charge (Qrr) • High avalanche energy rating • 175°C operating temperature • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21 • 100% avalanche tested Product validation Fully qualified according to JEDEC for Industrial Applications Table 1 Key performance parameters Parameter Value Unit VDS 200 V RDS(on),max 6.