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IPP076N15N5 - MOSFET

General Description

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Key Features

  • Excellent gate charge x RDS(on) product (FOM).
  • Very low on-resistance RDS(on).
  • Very low reverse recovery charge (Qrr).
  • 175 °C operating temperature.
  • Pb-free lead plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

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IPP076N15N5 MOSFET OptiMOSª5Power-Transistor,150V Features •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •Verylowreverserecoverycharge(Qrr) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchronousrectification •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 150 V RDS(on),max 7.6 mΩ ID 112 A Qrr 96 nC TO-220-3 tab Drain Pin 2, Tab Gate Pin 1 Source Pin 3 Type/OrderingCode IPP076N15N5 Package PG-TO220-3 Marking 076N15N5 RelatedLinks - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev.2.