IPP083N10N5
IPP083N10N5 is MOSFET manufactured by Infineon.
Description
Features
- Idealforhighfrequencyswitchingandsync.rec.
- Excellentgatechargex RDS(on)product(FOM)
- Verylowon-resistance RDS(on)
- N-channel,normallevel
- 100%avalanchetested
- Pb-freeplating;Ro HSpliant
- Qualifiedaccordingto JEDEC1)fortargetapplications
- Halogen-freeaccordingto IEC61249-2-21
Table1Key Performance Parameters
Parameter
Value
Unit
VDS 100 V
RDS(on),max
8.3 mΩ
ID 73 A
Qoss
40 n C
QG(0V..10V)
30 n C
Opti MOSª5Power-Transistor,100V IPP083N10N5
TO-220-3 tab
Drain Pin 2, Tab
Gate Pin 1
Source Pin 3
Type/Ordering Code IPP083N10N5
Package PG-TO220-3
Marking 083N10N5
Related Links
- 1) J-STD20 and JESD22 Final Data Sheet
Rev.2.0,2014-12-17
Opti MOSª5Power-Transistor,100V
Tableof Contents
Description
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