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IPP086N10N3 - Power-Transistor

This page provides the datasheet information for the IPP086N10N3, a member of the IPP086N10N3G Power-Transistor family.

Product Overview

Infineon

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IPP086N10N3 Power-Transistor by Infineon - Datasheet Preview — Datasheet preview – IPP086N10N3

Datasheet Details

Part number	IPP086N10N3
Manufacturer	Infineon
File Size	757.25 KB
Description	Power-Transistor
Datasheet	IPP086N10N3 Datasheet
Additional preview pages of the IPP086N10N3 datasheet.

IPP086N10N3 Product details

Features

N-channel, normal level.
Excellent gate charge x R DS(on) product (FOM).
Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO 252) ID 100 V 8.2 mW 80 A.
175 °C operating temperature.
Pb-free lead plating; RoHS compliant.
Qualified according to JEDEC1) for target.

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Published: Sep 30, 2020 |