IPP114N12N3
IPP114N12N3 is Power-Transistor manufactured by Infineon.
- Part of the IPP114N12N3G comparator family.
- Part of the IPP114N12N3G comparator family.
OptiMOSTM3 Power-Transistor
Features
- N-channel, normal level
- Excellent gate charge x R DS(on) product (FOM)
- Very low on-resistance R DS(on)
Product Summary VDS RDS(on)max ID
- 175 °C operating temperature
- Pb-free lead plating; RoHS pliant; halogen free
- Qualified according to JEDEC1) for target application
- Ideal for high-frequency switching and synchronous rectification
Type
IPP114N12N3 G
IPP114N12N3 G
120 V 11.4 mΩ 75 A
Package Marking
PG-TO220-3 114N12N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current Pulsed drain current2)
ID I D,pulse
T C=25 °C T C=100 °C T C=25 °C
Avalanche energy, single...
