• Part: IPP120N06S4-H1
  • Description: Power-Transistor
  • Category: Transistor
  • Manufacturer: Infineon
  • Size: 165.04 KB
Download IPP120N06S4-H1 Datasheet PDF
Infineon
IPP120N06S4-H1
IPP120N06S4-H1 is Power-Transistor manufactured by Infineon.
Features - N-channel - Enhancement mode - AEC Q101 qualified - MSL1 up to 260°C peak reflow - 175°C operating temperature - Green Product (Ro HS pliant) - 100% Avalanche tested IPB120N06S4-H1 IPI120N06S4-H1, IPP120N06S4-H1 Product Summary V DS R DS(on),max (SMD version) ID 60 V 2.1 mΩ 120 A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB120N06S4-H1 IPI120N06S4-H1 IPP120N06S4-H1 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 4N06H1 4N06H1 4N06H1 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) I D T C=25°C, V GS=10V T C=100°C, V GS=10V2) Pulsed drain current2) I D,pulse T C=25°C Avalanche energy, single pulse2) E AS I D=60A Avalanche current, single pulse I AS - Gate source voltage V GS - Power dissipation P tot T C=25°C Operating and storage temperature T j, T stg - IEC climatic category; DIN IEC 68-1 - Value 120 480 1060 120 ±20 250 -55 ... +175 55/175/56 Unit A m J A V W °C Rev. 1.0 page 1 2009-03-23 IPB120N06S4-H1 IPI120N06S4-H1, IPP120N06S4-H1 Parameter...