• Part: IPP339N20NM6
  • Description: 200V Power-Transistor
  • Category: Transistor
  • Manufacturer: Infineon
  • Size: 893.03 KB
Download IPP339N20NM6 Datasheet PDF
Infineon
IPP339N20NM6
Features - N‑channel, normal level - Very low on‑resistance RDS(on) - Excellent gate charge x RDS(on) product (FOM) - Very low reverse recovery charge (Qrr) - High avalanche energy rating - 175°C operating temperature - Pb‑free lead plating; Ro HS pliant - Halogen‑free according to IEC61249‑2‑21 - 100% avalanche tested Product validation Fully qualified according to JEDEC for Industrial Applications Table 1 Key performance parameters Parameter Value Unit RDS(on),max 33.9 mΩ Qoss 48 n C 15.9 n C Qrr (1000A/μs) 234 n C Part number IPP339N20NM6 Package PG‑TO220‑3 PG‑TO220‑3 tab 1 23 Drain Pin 2, Tab Gate Pin 1 Source Pin 3 Marking 339N20N6 Related links ‑ Datasheet https://.infineon. Revision 2.1 2025‑02‑26 Public Opti MOS™ 6 Power‑Transistor, 200...