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IPP339N20NM6 Final datasheet
MOSFET
OptiMOS™ 6 Power‑Transistor, 200 V
Features
• N‑channel, normal level • Very low on‑resistance RDS(on) • Excellent gate charge x RDS(on) product (FOM) • Very low reverse recovery charge (Qrr) • High avalanche energy rating • 175°C operating temperature • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21 • 100% avalanche tested
Product validation
Fully qualified according to JEDEC for Industrial Applications
Table 1 Key performance parameters
Parameter
Value
Unit
VDS
200
V
RDS(on),max
33.9
mΩ
ID
39
A
Qoss
48
nC
QG
15.
IPP339N20NM6 Datasheet
