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IPP339N20NM6 - 200V Power-Transistor

General Description

1 Maximum ratings 3 T

Key Features

  • N‑channel, normal level.
  • Very low on‑resistance RDS(on).
  • Excellent gate charge x RDS(on) product (FOM).
  • Very low reverse recovery charge (Qrr).
  • High avalanche energy rating.
  • 175°C operating temperature.
  • Pb‑free lead plating; RoHS compliant.
  • Halogen‑free according to IEC61249‑2‑21.
  • 100% avalanche tested Product validation Fully qualified according to JEDEC for Industrial.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Public IPP339N20NM6 Final datasheet MOSFET OptiMOS™ 6 Power‑Transistor, 200 V Features • N‑channel, normal level • Very low on‑resistance RDS(on) • Excellent gate charge x RDS(on) product (FOM) • Very low reverse recovery charge (Qrr) • High avalanche energy rating • 175°C operating temperature • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21 • 100% avalanche tested Product validation Fully qualified according to JEDEC for Industrial Applications Table 1 Key performance parameters Parameter Value Unit VDS 200 V RDS(on),max 33.9 mΩ ID 39 A Qoss 48 nC QG 15.