IPP50R280CE
Description
Sheet 2 Rev.2.2,2016-06-13 500VCoolMOSªCEPowerTransistor IPW50R280CE,IPP50R280CE 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Pulsed drain current2) Avalanche energy, single pulse Avalanche energy, repetitive Avalanche current, repetitive MOSFET dv/dt ruggedness ID ID,pulse EAS EAR IAR dv/dt Gate source voltage VGS Power dissipation (non FullPAK) TO-247, TO-220 Ptot Operating and storage temperature Tj,Tstg Mounting TO-220 torque (non FullPAK) TO-247, - Continuous diode forward current Diode pulse current2).
Key Features
- ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
- Veryhighmutationruggedness
- Easytouse/drive
- Pb-freeplating,Halogenfreemoldpound
