IPP50R399CP Datasheet | Infineon

Features - Lowest figure-of-merit RON x Qg - Ultra low gate charge - Extreme dv/dt rated - High peak current capability - Pb-free lead plating; Ro HS pliant - Quailfied according to JEDEC1) for target applications Product Summary V DS @Tjmax R DS(on),max Q g,typ 560 V 0.399 Ω 17 n C PG-TO220 Cool MOS CP is designed for: - Hard and soft switching SMPS topologies - DCM PFC for Lamp Ballast - PWM for Lamp Ballast, LCD & PDP TV Type IPP50R399CP Package PG-TO220 Marking 5R399P Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25 °C Pulsed drain current2) Avalanche energy, single pulse Avalanche energy, repetitive t 2),3) AR Avalanche current, repetitive t 2),3) AR MOSFET dv /dt ruggedness Gate source voltage I D,pulse E AS E AR I AR dv /dt V GS T C=100 °C T C=25 °C I D=3.3 A, V DD=50 V I D=3.3 A, V DD=50 V V DS=0...400 V static AC (f>1 Hz) Power dissipation Operating and storage temperature P tot T C=25 °C T j, T stg Mounting torque M3 and M3.5 screws Rev. 2.0 page...