Datasheet Summary
IPB530N15N3 G IPD530N15N3 G IPI530N15N3 G IPP530N15N3 G
OptiMOSTM3 Power-Transistor
Features
- N-channel, normal level
- Excellent gate charge x R DS(on) product (FOM)
- Very low on-resistance R DS(on)
Product Summary VDS RDS(on),max ID
150 V 53 mW 21 A
- 175 °C operating temperature
- Pb-free lead plating; RoHS pliant; Halogen Free
- Qualified according to JEDEC1) for target application
- Ideal for high-frequency switching and synchronous rectification
- Halogen-free according to IEC61249-2-21
Type
IPB530N15N3 G IPD530N15N3 G IPI530N15N3 G
IPP530N15N3 G
Package Marking
PG-TO263-3 530N15N
PG-TO252-3 530N15N
PG-TO262-3 530N15N
Maximum ratings, at T j=25 °C, unless...
