IPP60R330P6
Description
Sheet 3 Rev.2.2,2015-07-10 600VCoolMOS™P6PowerTransistor IPW60R330P6,IPB60R330P6,IPP60R330P6, IPA60R330P6 2Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Pulsed drain current2) Avalanche energy, single pulse Avalanche energy, repetitive Avalanche current, repetitive MOSFET dv/dt ruggednes.
Key Features
- IncreasedMOSFETdv/dtruggedness
- ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
- Veryhighmutationruggedness
- Easytouse/drive
- Pb-freeplating,Halogenfreemoldpound
- QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20 andJESD22)
