IPP65R099CFD7A
Description
Sheet 2 Rev.2.0,2020-03-25 650VCoolMOSªCFD7ASJPowerDevice IPP65R099CFD7A 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Pulsed drain current2) Avalanche energy, single pulse Avalanche current, single pulse MOSFET dv/dt ru.
Key Features
- Latest650Vautomotivequalifiedtechnologywithintegratedfastbody diodeonthemarketfeaturingultralowQrr
- LowestFOMRDS(on)*QgandRDS(on)*Eoss
- 100%avalanchetested
- Best-in-classRDS(on)inSMDandTHDpackages Benefits
- Optimizedforhigherbatteryvoltagesupto475Vthankstofurther improvedrobustness
- Lowerswitchinglossesenablinghigherswitchingfrequencies
- Highqualityandreliability
- Increasedefficiencyinlightloadandfullloadconditions Potentialapplications SuitableforPFCandDC-DCstagesfor
- UnidirectionalandbidirectionalDC-DCconverters
