IPP65R225C7
Description
Sheet 3 Rev.2.0,2013-04-18 650VCoolMOS™C7PowerTransistor IPP65R225C7 2Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current 1) Pulsed drain current 2) Avalanche energy, single pulse Avalanche energy, repetitive Avalanche current, single pulse MOSFET dv/dt ruggedness Gate source voltage (static) Gate source voltage (dynamic) Power dissipation S.
Key Features
- IncreasedMOSFETdv/dtruggedness
- BetterefficiencyduetobestinclassFOMRDS(on)*EossandRDS(on)*Qg
- BestinclassRDS(on)/package
- Easytouse/drive
- Pb-freeplating,halogenfreemoldpound
- QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20 andJESD22) Benefits
- Enablinghighersystemefficiency
- Enablinghigherfrequency/increasedpowerdensitysolutions
- Systemcost/sizesavingsduetoreducedcoolingrequirements
- Highersystemreliabilityduetoloweroperatingtemperatures
