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IPP80N06S4L-07 - Power-Transistor

Key Features

  • N-channel - Enhancement mode.
  • AEC Q101 qualified.
  • MSL1 up to 260°C peak reflow.
  • 175°C operating temperature.
  • Green Product (RoHS compliant).
  • 100% Avalanche tested IPB80N06S4L-07 IPI80N06S4L-07, IPP80N06S4L-07 Product Summary V DS R DS(on),max (SMD version) ID 60 V 6.4 mΩ 80 A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB80N06S4L-07 IPI80N06S4L-07 IPP80N06S4L-07 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 4N06L07 4N06L07 4.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested IPB80N06S4L-07 IPI80N06S4L-07, IPP80N06S4L-07 Product Summary V DS R DS(on),max (SMD version) ID 60 V 6.