Infineon Technologies IPS050N03LG
Power-Transistor
| Part No. | IPS050N03LG |
|---|---|
| Datasheet | IPS050N03LG Download |
| Manufacturer |  Infineon Technologies |
| Description | Power-Transistor |
| Buy | Stock & Price |
FEATURES
● Fast switching MOSFET for SMPS● Optimized technology for DC/DC converters
● Qualified according to JEDEC1) for target applications
● N-channel, logic level
● Excellent gate charge x R DS(on) product (FOM)
● Very low on-resistance R DS(on)
● Avalanche rated
● Pb-free plating; RoHS compliant IPD050N03L G IPS050N03L G IPF050N03L G IPU050N03L G Product Summary VDS RDS(on),max ID 30 V 5 mW 50 A Type IPD050N03L G IPF050N03L G IPS050N03L G IPU050N03L G Package Marking PG-TO252-3-11 050N03L PG-TO252-3-23 050N03L PG-TO251-3-11 050N03L PG-TO251-3-21 050N03L Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value Unit Continuous drain current Pulsed drain current2) Avalanche current, single pulse3) Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage 1) J-STD20 and JESD22 Rev. 2.0 I D V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C V GS=4.5 V, T C=25 °C V GS=4.5
